EFFECT OF VARIOUS SURFACTANTS ON SURFACE ROUGHNESS REDUCTION DURING COBALT "BUFF STEP" CMP

被引：0

作者：

Cheng, Yuanshen ^{[1
,2
]}

Wang, Shengli ^{[1
,2
]}

Wang, Chenwei ^{[1
,2
]}

Yang, Yundian ^{[1
,2
]}

机构：

[1] Hebei Univ Technol, Sch Elect Informat Engn, Tianjin 300130, Peoples R China

[2] Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China

来源：

2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年

关键词：

Cobalt; chemical mechanical polishing; surfactant; surface roughness;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, effect of various surfactants on surface roughness reduction during cobalt "Buff step" chemical mechanical planarization were investigated. Various surfactants were characterized by atomic force microscope (AFM), surface tension, contact angle, viscosity, zeta potential and material removal rate. The result showed that all kinds of surfactants inhibit the removal rate of Cobalt, Solution Containing anionic surfactant conduce to obtain small surface roughness compared with others. The mechanism of reducing cobalt surface roughness by surfactant is proposed.

引用

页数：3

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