Heavily irradiated double-sided wedge silicon microstrip detector

One double-sided trapezoidal microstrip n-type detector was irradiated with 1 MeV neutrons up to a dose of 7.9 x 10(13)n/cm(2) at PSAIF (CERN) and was characterized with laboratory measurements. Biasing resistance and interstrip impedance measurements show that the silicon bulk is inverted to p-type, as expected. After irradiation, the full depletion voltage is about 90 V, at which value the total leakage current is 56 mu A/cm(2). The full depletion voltage value obtained from the I-V characteristics agrees with the value calculated with a bulk damage model(M. Bruzzi et al., Nucl. Instr. and Meth. A 388 (1997) 345: J.A.J. Mathews et al., Atlas internal note, INDET-NO-118. 1995). (C) 1998 Elsevier Science B.V. All rights reserved.