Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

被引：69

作者：

Nishikawa, A. ^{[1
]}

Furukawa, N. ^{[1
]}

Kawasaki, T. ^{[1
]}

Terai, Y. ^{[1
]}

Fujiwara, Y. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

基金：

日本学术振兴会;

关键词：

ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; FABRICATION; EMISSION;

D O I：

10.1063/1.3478011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the luminescence properties of Eu-doped GaN (GaN:Eu) grown by atmospheric-pressure organometallic vapor phase epitaxy. The GaN: Eu exhibited radiant red emission due to the intra-4f shell transition of Eu3+ ions at room temperature. The intensity of the dominant peak was about 4 times higher than that in the sample grown at 10 kPa, even though the Eu concentration was only half that of the 10 kPa sample. This was mainly caused by the enhancement of the energy transfer from the GaN host to Eu ions. The enhanced energy transfer resulted in improved luminescence properties of a GaN: Eu light-emitting diode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478011]

引用

页数：3

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