Semiconductor Nanostructures Modified by the UV Laser Radiation

被引：12

作者：

Rubtsova, N. N. ^{[1
]}

Kuleshov, N. V. ^{[2
]}

Kisel, V. E. ^{[2
]}

Kochubei, S. A. ^{[1
]}

Kovalyov, A. A. ^{[1
]}

Kurilchik, S. V. ^{[2
]}

Preobrazhenskii, V. V. ^{[1
]}

Putyato, M. A. ^{[1
]}

Pchelyakov, O. P. ^{[1
]}

Shamirzaev, T. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Belarus Natl Tech Univ, Sci Res Inst Opt Mat & Technol, Minsk 220013, BELARUS

来源：

LASER PHYSICS | 2010年 / 20卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

ACKNOWLEDGMENTS This work was supported by the Russian Founda tion for Basic Research (project nos. 09 02 00030 and 08 02 90010Bel_a); the Presidium of the Russian Academy of Sciences (Program Quantum Physics of Condensed Media); the Russian Presidential Grant for the Support of the Leading Scientific Schools (project VNSh 1811 1008.2); and Integration Project no. 128 of the Siberian Branch; Russian Academy of Sciences and the National Academy of Sciences of Belarus;

D O I：

10.1134/S1054660X10100051

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/InxGa1-xAs/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser. A possible reason for such a significant variation in the optical properties lies in the generation of point defects, which are responsible for recombination of charge carriers. The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.

引用

页码：1262 / 1265

页数：4

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