Inhomogeneity-induced high temperature ferromagnetism in n-type ferromagnetic semiconductor (In,Fe)As grown on vicinal GaAs substrates

被引：5

作者：

Hai, Pham Nam ^{[1
,2
]}

Yoshida, Munehiko ^{[1
]}

Nagamine, Akihide ^{[1
]}

Tanaka, Masaaki ^{[2
,3
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1520033, Japan

[2] Univ Tokyo, CSRN, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[3] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 06期

基金：

日本科学技术振兴机构;

关键词：

ferromagnetic semiconductor; (In; Fe)As; spinodal decomposition;

D O I：

10.35848/1347-4065/ab9401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We systematically investigate the electrical and magnetic properties of n-type ferromagnetic semiconductor (In,Fe)As thin films grown on vicinal GaAs(001) substrates with different lattice-relaxation layers and Fe-doping techniques. We show that spinodal decomposition and ferromagnetism can be enhanced in the (In,Fe)As thin films grown on InAs lattice-relaxation layers under the nucleation growth mode, while they are suppressed in those grown on the GaSb/AlSb/AlAs (from top to bottom) lattice-relaxation layers under the step-flow growth mode. We demonstrate that room-temperature ferromagnetism and good electrical properties can be obtained at the same time by using the Fe-delta-doping technique in combination with the step-flow growth mode.

引用

页数：8

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