Polarization-enhanced AlGaN solar-blind ultraviolet detectors

被引：40

作者：

Jiang, Ke ^{[1
,2
]}

Sun, Xiaojuan ^{[1
,2
]}

Zhang, Zi-Hui ^{[1
,3
]}

Ben, Jianwei ^{[1
,2
,5
]}

Che, Jiamang ^{[3
]}

Shi, Zhiming ^{[1
,2
]}

Jia, Yuping ^{[1
,2
]}

Chen, Yang ^{[1
,2
]}

Zhang, Shanli ^{[1
,2
]}

Lv, Wei ^{[1
,4
]}

Li, Dabing ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Hebei Univ Technol, Sch Elect & Informat Engn, Key Lab Elect Mat & Devices Tianjin, Tianjin 300401, Peoples R China

[4] Changchun Univ Technol, Key Lab Adv Struct Mat, Minist Educ, Changchun 130012, Peoples R China

[5] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518071, Peoples R China

来源：

PHOTONICS RESEARCH | 2020年 / 8卷 / 07期

基金：

中国国家自然科学基金;

关键词：

THERMAL-STABILITY; SCHOTTKY CONTACTS; GAN; HETEROSTRUCTURE; PHOTODETECTORS; PERFORMANCE; ALN; PHOTODIODES; NI;

D O I：

10.1364/PRJ.392041

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

AlGaN solar-blind ultraviolet detectors have great potential in many fields, although their performance has not fully meet the requirements until now. Here, we proposed an approach to utilize the inherent polarization effect of AlGaN to improve the detector performance. AlGaN heterostructures were designed to enhance the polarization field in the absorption layer, and a high built-in field and a high electron mobility conduction channel were formed. As a result, a high-performance solar-blind ultraviolet detector with a peak responsivity of 1.42 A/W at 10 V was achieved, being 50 times higher than that of the nonpolarization-enhanced one. Moreover, an electron reservoir structure was proposed to further improve the performance. A higher peak responsivity of 3.1 A/W at 30 V was achieved because the electron reservoir structure could modulate the electron concentration in the conduction channel. The investigation presented here provided feasible approaches to improve the performance of the AlGaN detector by taking advantage of its inherent property. (c) 2020 Chinese Laser Press

引用

页码：1243 / 1252

页数：10

共 49 条

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