Zinc vacancies and interstitials in ZnO nanorods

被引：6

作者：

Boukos, N. ^{[1
]}

Chandrinou, C. ^{[1
]}

Travlos, A. ^{[1
]}

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Mat Sci, Athens 15310, Greece

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 14期

关键词：

ZnO nanorods; Photoluminescence; Intrinsic defects; Zn vacancies; Zn interstitials; OXIDE; DEFECTS; DONOR; FILMS;

D O I：

10.1016/j.tsf.2011.10.138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nominally undoped ZnO nanorods, grown by a chemical method, have been post-treated to intentionally incorporate high concentrations of zinc vacancies and zinc interstitials and were studied with electron microscopy and low temperature photoluminescence spectroscopy. The Zn-i are related to the 3.405 eV peak at 4.2 K, verifying that Zn-i is a shallow donor lying 30 meV below the conduction band minimum, while the acceptors V-zn are related to the 3.308 eV peak at 4.2 K and have an activation energy of 123 meV. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4654 / 4657

页数：4

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