Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching

被引：11

作者：

Nakamine, Yoshifumi ^{[1
]}

Kodera, Tetsuo ^{[2
]}

Uchida, Ken ^{[1
]}

Oda, Shunri ^{[2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528852, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528852, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 11期

基金：

日本学术振兴会;

关键词：

PARTICLE-SIZE; QUANTUM DOTS; LOW-PRESSURE; PLASMA; TRANSISTORS; FILMS; ELECTROLUMINESCENCE; FABRICATION; DEPOSITION; MOBILITY;

D O I：

10.1143/JJAP.50.115002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the natural oxidation of silicon nanocrystals (SiNCs) and the method of etching the natural oxide layer of SiNC with hydrogen fluoride (HF) vapor. Electrical measurements are conducted in order to investigate the influence of the natural oxidation of SiNCs. The wet HF etching process, which is currently used in the semiconductor industry, results in the removal of all SiNCs from the substrate. Therefore, we use HF vapor etching, which can remove only the natural oxide layer without the removal of SiNCs from the substrate. Consequently, the HF vapor process is suitable for SiNC devices. From electrical measurements, it is observed that current increases by four orders of magnitude after the HF vapor etching treatment. In addition, it is revealed that we can control the thickness of the oxide layer of SiNCs by changing the HF vapor etching time. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 35 条

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