RF-magnetron sputtering deposition of ultra-thin Hf0.5Zr0.5O2 films for non-volatile memory applications

被引：4

作者：

Ambriz-Vargas, F. ^{[1
]}

Nouar, R. ^{[2
]}

Kolhatkar, G. ^{[1
]}

Sarkissian, A. ^{[2
]}

Thomas, R. ^{[1
]}

Gomez-Yanez, C. ^{[3
]}

Gauthier, M. A. ^{[1
]}

Ruediger, A. ^{[1
]}

机构：

[1] INRS Energie Mat & Telecommun, Nanoelect Nanophoton, 1650 Lionel Boulet, Varennes, PQ J3X 1S2, Canada

[2] Plasmionique Inc, 9092 Rimouski, Brossard, PQ J4X 2S3, Canada

[3] Inst Politecn Nacl, ESIQIE, Dept Ingn Met & Mat, San Pedro Zacatenco 07738, Mexico

来源：

MATERIALS TODAY-PROCEEDINGS | 2017年 / 4卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

On-axis sputter deposition; Ferroelectric properties; Piezoresponse Force Microscopy; Ferroelectric Tunnel Junction memory; FERROELECTRIC TUNNEL-JUNCTIONS; ELECTRORESISTANCE;

D O I：

10.1016/j.matpr.2017.07.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study reports on-axis sputter deposition of Hf0.5Zr0.5O2 thin films on platinized silicon substrates (Pt/Al2O2/SiO2/Si) as well as boron doped silicon substrates (P-Si), using a table top RF-magnetron sputtering unit. Through optimization steps of deposition parameters, as revealed by X-ray photoelectron spectroscopy, stoichiometric Hf0.5Zr0.5O2 films were obtained at low sputtering pressure of 5 mTorr and a power density similar to 4W/cm(2). Fine grained surface morphology for Hf0.5Zr0.5O2 films and rms roughness comparable to the underlying Pt surface were observed by atomic force microscopy. The effect of synthesis temperature and film thickness on the ferroelectric properties was investigated by piezoresponse force microscopy. Ferroelectricity in a two unit cell-thick layer of Hf0.5Zr0.5O2 (t approximate to 1nm) was observed. This result is of great interest for the fabrication of ferroelectric tunnel junction memories. Furthermore, current-voltage measurements confirm that resistive switching occurs in 7-nm thick Hf0.5Zr0.5O2 samples, suggesting another potential application as a resistive random access memory. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：7000 / 7010

页数：11

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