Mechanical cleaning of graphene

被引：155

作者：

Goossens, A. M. ^{[1
]}

Calado, V. E. ^{[1
]}

Barreiro, A. ^{[1
]}

Watanabe, K. ^{[2
]}

Taniguchi, T. ^{[2
]}

Vandersypen, L. M. K. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[2] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期

基金：

欧洲研究理事会;

关键词：

BILAYER GRAPHENE;

D O I：

10.1063/1.3685504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of similar to 36 000 cm(2)/Vs at low temperature. (C) 2012 American Institute of Physics. [doi:10.1063/1.3685504]

引用

页数：3

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