Faster radial strain relaxation in InAs-GaAs core-shell heterowires

被引：58

作者：

Kavanagh, Karen L. ^{[1
]}

Saveliev, Igor ^{[2
]}

Blumin, Marina ^{[2
]}

Swadener, Greg ^{[3
]}

Ruda, Harry E. ^{[2
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada

[3] Aston Univ, Birmingham B4 7ET, W Midlands, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 04期

关键词：

MISFIT DISLOCATIONS; MATERIAL PARAMETERS; CRITICAL DIMENSIONS; MORPHOLOGY; GROWTH; NANOWIRES; GE;

D O I：

10.1063/1.3684964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684964]

引用

页数：9

共 34 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].