Magnetic and electrical properties of amorphous Ge1-xCrx thin films grown by low temperature vapor deposition

被引：1

作者：

Yu, Sang Soo ^{[1
]}

Han, Kyung Hee ^{[1
]}

Ihm, Young Eon ^{[1
]}

Kim, Dojin ^{[1
]}

Kim, Hyojin ^{[1
]}

Kim, Chang Soo ^{[2
]}

Ryu, Hyun ^{[2
]}

Oh, Sangjun ^{[3
]}

机构：

[1] Chungnam Natl Univ, Taejon 305764, South Korea

[2] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

[3] Korea Basic Sci Inst, Taejon 305333, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 304卷 / 01期

关键词：

Magnetic semiconductor; Spintronics materials; Ge-Cr intermetallic compounds;

D O I：

10.1016/j.jmmm.2006.02.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Ge1-xCrx thin films are deposited on (1 0 0) Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89 x 10(-3) - 0.96 x 10(2) Omega cm at 300 K, and decrease with Cr concentration. The Ge1-xCrx thin films are p-type. The hole concentrations are 5 x 10(16) - 7 x 10(21) cm(-3) at 300 K, and increase with Cr concentration. Magnetizations are 7.60-1.57 emu/cm(3) at 5K in the applied field of 2T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge1-xCrx thin films are paramagnetic. (C) 2006 Elsevier B. V. All rights reserved.

引用

页码：E170 / E172

页数：3

共 11 条

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[5] Magneto-transport properties of amorphous Ge1-xMnx thin films
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