Enhancing the thermoelectric performance of Sn0.5Ge0.5Te via doping with Sb/Bi and alloying with Cu2Te: Optimization of transport properties and thermal conductivities

被引：6

作者：

Song, Shaochang ^{[1
]}

Lo, Chun-Wan Timothy ^{[1
]}

Aminzare, Masoud ^{[1
]}

Tseng, Yu-Chih ^{[2
]}

Valiyaveettil, Suneesh Meledath ^{[3
,4
]}

Mozharivskyj, Yurij ^{[1
]}

机构：

[1] McMaster Univ, Dept Chem & Chem Biol, Hamilton, ON, Canada

[2] Nat Resources Canada, CanmetMAT, Hamilton, ON, Canada

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[4] Natl Cent Univ, Dept Phys, Taoyuan 32001, Taiwan

来源：

DALTON TRANSACTIONS | 2020年 / 49卷 / 18期

基金：

加拿大自然科学与工程研究理事会;

关键词：

VALENCE-BAND CONVERGENCE; P-TYPE PBTE; SNTE; FIGURE; MERIT; GETE; ENHANCEMENT; THERMOPOWER; SCATTERING; TELLURIDE;

D O I：

10.1039/d0dt00544d

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The current work provides a comparative study of the thermoelectric properties of the Sn0.5Ge0.5Te phases doped with Sb and Bi and alloyed with Cu2Te. The Sn0.5Ge0.5Te composition was chosen based on the fact that it delivers the highest ZT value within the Sn1-xGex Te series (x <= 0.5). Doping Sn0.5Ge0.5Te with electron-richer Sb and Bi improves both the charge transport properties and thermal conductivities. Alloying with Cu2Te optimizes the thermoelectric performance of the samples even further, yielding a ZT value of 0.99 for (Sn0.5Ge0.5)(0.91)Bi0.06Te(Cu2Te)(0.05) at 500 degrees C. Hall measurements were performed to understand the effects of doping and alloying.

引用

页码：6135 / 6144

页数：10

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