Effects of the number of wells on the performance of green InGaN/GaN LEDs with V-shape pits grown on Si substrates

被引：12
作者：
Wu, Qingfeng [1 ]
Zhang, Jianli [1 ]
Mo, Chunlan [1 ]
Wang, Xiaolan [1 ]
Quan, Zhijue [1 ]
Wu, Xiaoming [1 ]
Pan, Shuan [1 ]
Wang, Guangxu [1 ]
Liu, Junlin [1 ]
Jiang, Fengyi [1 ]
机构：
[1] Nanchang Univ, Natl Inst LED Si Substrate, Nanchang 330096, Jiangxi, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 114卷
基金：
美国国家科学基金会; 国家重点研发计划; 中国国家自然科学基金;
关键词：
Green light emitting diodes; The number of wells; V-shape pits; Interface roughness; LIGHT-EMITTING-DIODES; CHEMICAL-VAPOR-DEPOSITION; INTERNAL QUANTUM EFFICIENCY; BLUE; FUTURE; DROOP; GAN;
D O I：
10.1016/j.spmi.2017.12.012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of the number of wells on quantum efficiency and forward voltage of vertical green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) grown on Si substrate has been experimentally investigated. We have prepared three LED samples with 3, 5 and 7 wells. Electroluminescence measurement shows that the LED with 5 wells has the highest external quantum efficiency (EQE) and the lowest forward voltage. It is observed that V-shaped pits grow up in size and density with an increase in quantum well number by means of scan electron microscope. Due to more hole injection via V-shaped pits, a larger area ratio of pits as a result of more number of wells would bring a lower forward voltage and a higher EQE. However, besides the increasing series resistance would bring a higher forward voltage, the interface of MQWs would become rougher and deteriorate the emission efficiency when increasing the wells number. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：89 / 96
页数：8
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