Successes and Challenges Associated with Solution Processing of Kesterite Cu2ZnSnS4 Solar Cells on Titanium Substrates

被引:6
作者
Wei, Zhengfei [1 ]
Dunlop, Thomas O. [1 ]
Heard, Peter J. [2 ]
Charbonneau, Cecile [1 ]
Worsley, David A. [1 ]
Watson, Trystan [1 ]
机构
[1] Swansea Univ, SPECIFIC, Coll Engn, Bay Campus, Swansea SA1 8EN, W Glam, Wales
[2] Univ Bristol, Interface Anal Ctr, Sch Phys, Bristol BS8 1TL, Avon, England
基金
英国工程与自然科学研究理事会;
关键词
CZTS; titanium; solar cell; stress; SIMS; LOW-COST; CU2ZNSN(S; SE)(4); LAYER;
D O I
10.1021/acsaem.0c00292
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Roll-to-roll (R2R) processing of solution-based Cu2ZnSn-(S,Se)(4) (CZT(S,Se)) solar cells on the flexible metal foil is an attractive way to achieve cost-effective manufacturing of photovoltaics. In this work, we report the first successful fabrication of solution-processed CZTS devices on a variety of titanium substrates with up to 2.88% power conversion efficiency (PCE) collected on flexible 75 mu m Ti foil. A comparative study of device performance and properties is presented aiming to address the key processing challenges. First, we show that a rapid transfer of heat through the titanium substrates is responsible for the accelerated crystallization of kesterite films characterized with small grain size, a high density of grain boundaries, and numerous pore sites near the Mo/CZTS interface, which affect charge transport and enhance recombination in devices. Following this, we demonstrate the occurrence of metal ion diffusion induced by the high-temperature treatment required for the sulfurization of the CZTS stack: Ti4+ ions are observed to migrate upward to the Mo/CZTS interface while Cu1+ and Zn2+ ions diffuse through the Mo layer into the Ti substrate. Finally, residual stress data confirm the good adhesion of stacked materials throughout the sequential solution process. These findings are evidenced by combining electron imaging observations, elemental depth profiles generated by secondary ion mass spectrometry, and X-ray residual stress analysis of the Ti substrate.
引用
收藏
页码:3876 / 3883
页数:8
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