Morphology and roughness of high-vacuum sublimed oligomer thin films

被引:19
作者
Biscarini, F
Samori, P
Lauria, A
Ostoja, P
Zamboni, R
Taliani, C
Viville, P
Lazzaroni, R
Bredas, JL
机构
[1] CNR, IST LAMEL, I-40129 BOLOGNA, ITALY
[2] UNIV MONS, CTR RECH ELECT & PHOTON MOL, SERV CHIM MAT NOUVEAUX, B-7000 MONS, BELGIUM
关键词
scanning probe microscopy; organic substances; growth mechanism; roughness scaling analysis;
D O I
10.1016/S0040-6090(95)08361-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an atomic force microscopy study on the morphology and roughness of sexithienyl (T6) thin films evaporated on mica in high vacuum. The effects of two thermal processes are investigated: (i) temperature of the substrate during evaporation, and (ii) annealing temperature in high vacuum. The former yields a good control on the extension of grain boundaries and the aggregate ordering, but does not affect surface roughness. The latter is characterized by a threshold temperature (similar to 175 degrees C) above which a smooth continuous surface is formed, The roughness scaling behaviour is analysed by the power spectrum of the topographical profiles. T6 surface is self-affine over 1-2 orders of magnitude of the spatial frequencies. However, films prepared at substrate temperatures above 200 degrees C or annealed above the critical temperature exhibit an extended self-affine behaviour. The roughness scaling factor suggests a growth process of the Kardar-Parisi-Zhang universality class.
引用
收藏
页码:439 / 443
页数:5
相关论文
共 22 条
[1]   GROWTH OF CONJUGATED OLIGOMER THIN-FILMS STUDIED BY ATOMIC-FORCE MICROSCOPY [J].
BISCARINI, F ;
ZAMBONI, R ;
SAMORI, P ;
OSTOJA, P ;
TALIANI, C .
PHYSICAL REVIEW B, 1995, 52 (20) :14868-14877
[2]   LOCATION OF CHARGE-TRANSFER STATES IN ALPHA-SEXITHIENYL DETERMINED BY THE ELECTROABSORPTION TECHNIQUE [J].
BLINOV, LM ;
PALTO, SP ;
RUANI, G ;
TALIANI, C ;
TEVOSOV, AA ;
YUDIN, SG ;
ZAMBONI, R .
CHEMICAL PHYSICS LETTERS, 1995, 232 (04) :401-406
[3]   SURFACE-ROUGHNESS SCALING OF PLASMA POLYMER-FILMS [J].
COLLINS, GW ;
LETTS, SA ;
FEARON, EM ;
MCEACHERN, RL ;
BERNAT, TP .
PHYSICAL REVIEW LETTERS, 1994, 73 (05) :708-711
[4]  
DOBABALAPUR A, 1995, SCIENCE, V268, P270
[5]  
Douketis C., 1995, PHYS REV B, V51, P51
[6]   QUANTITATIVE MICROROUGHNESS ANALYSIS DOWN TO THE NANOMETER-SCALE [J].
DUMAS, P ;
BOUFFAKHREDDINE, B ;
AMRA, C ;
VATEL, O ;
ANDRE, E ;
GALINDO, R ;
SALVAN, F .
EUROPHYSICS LETTERS, 1993, 22 (09) :717-722
[7]   DYNAMIC SCALING AND PHASE-TRANSITIONS IN INTERFACE GROWTH [J].
FAMILY, F .
PHYSICA A, 1990, 168 (01) :561-580
[8]   FRACTAL SURFACES OF GOLD AND PLATINUM ELECTRODEPOSITS - DIMENSIONALITY DETERMINATION BY SCANNING TUNNELING MICROSCOPY [J].
GOMEZRODRIGUEZ, JM ;
BARO, AM ;
VAZQUEZ, L ;
SALVAREZZA, RC ;
VARA, JM ;
ARVIA, AJ .
JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (01) :347-350
[9]   THE OLIGOTHIOPHENE-BASED FIELD-EFFECT TRANSISTOR - HOW IT WORKS AND HOW TO IMPROVE IT [J].
HOROWITZ, G ;
PENG, XZ ;
FICHOU, D ;
GARNIER, F .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :528-532
[10]   CRYSTAL-STRUCTURES OF OLIGOTHIOPHENES AND THEIR RELEVANCE TO CHARGE-TRANSPORT [J].
HOTTA, S ;
WARAGAI, K .
ADVANCED MATERIALS, 1993, 5 (12) :896-908