Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy

被引：3

作者：

Ketata, K ^{[1
]}

Ketata, M ^{[1
]}

Koumetz, S ^{[1
]}

Marcon, J ^{[1
]}

Masmoudi, M ^{[1
]}

机构：

[1] Univ Rouen, LEMI, UPRES EA 2654, IUT, F-76821 Mt St Aignan, France

来源：

MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING | 1998年 / 6卷 / 06期

关键词：

D O I：

10.1088/0965-0393/6/6/006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion of Be during post-growth rapid thermal annealing (RTA) in InGaAs layers grown by gas source molecular beam epitaxy (GSMBE) has been studied. The observed secondary ion mass spectrometry (SIMS) concentration distributions, obtained for annealing cycles with time durations of 10 s to 240 s and temperatures in the range 700-900 degrees C for Be doping concentration of 3 x 10(19) cm(-3), could be explained by a kick-out mechanism considering neutral Be interstitials and singly positively charged group III self-interstitials. Be and Ga, In interstitial diffusivities, the equilibrium concentration of Ga and In interstitials, as a function of temperature, are obtained from this work.

引用

页码：747 / 753

页数：7

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