Freestanding GaN grating couplers at visible wavelengths

被引：13

作者：

Liu, Qifa ^{[1
]}

Shi, Zheng ^{[1
]}

Zhu, Gangyi ^{[1
]}

Wang, Wei ^{[1
]}

Wang, Zhenhai ^{[1
]}

Wang, Yongjin ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Grunberg Res Ctr, Nanjing 210003, Jiangsu, Peoples R China

来源：

JOURNAL OF OPTICS | 2015年 / 17卷 / 04期

关键词：

freestanding GaN grating coupler; double-side fabrication; coupling efficiency; planar photonic; GaN-Si platform; LIGHT-EMITTING-DIODES; WAVE-GUIDES; EMISSION; SILICON; FABRICATION; DEVICES;

D O I：

10.1088/2040-8978/17/4/045607

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A freestanding GaN grating coupler is proposed for planar photonic applications within the visible-wavelength spectrum. This freestanding device was produced by double-sided fabrication, combining GaN front patterning with Si substrate back releasing and GaN slab back thinning. Transverse-electric (TE) and transverse-magnetic (TM) light-wave conversion into and out of the membrane through grating coupling was determined by optical measurement. The maximum coupling efficiency is up to 69% for TE waves and 66% for TM waves at each particular wavelength according to the finite element method (FEM) simulation results. The experimental results were also supported by reflective simulation based on rigorous coupled-wave analysis (RCWA). This work opens the way for freestanding GaN planar photonic devices operating within the visible-wavelength range. It also provides the possibility of monolithic integration of planar photonic and light sources on III-nitride active platforms.

引用

页数：6

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