A novel high temperature pressure sensor on the basis SOI layers

被引：49

作者：

Zhao, YL ^{[1
]}

Zhao, LB ^{[1
]}

Jiang, ZD ^{[1
]}

机构：

[1] Xian Jiaotong Univ, Inst Precis Engn, Xian 710049, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2003年 / 108卷 / 1-3期

关键词：

pressure sensor; SOI strain gauge; harsh environment;

D O I：

10.1016/j.sna.2003.07.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The principle of silicon-on-insulator (SOI) and low pressure chemical vapour deposited (LPCVD) to make the piezoresisitive pressure gauge is developed. A novel structure of the sensors for harsh environment is designed. In particular, the high temperature pressure sensors were used in: automotive industry, aviation engineering, as well as in oil fields, industrial measurement and control systems. The sensor could be used in 200 degreesC environment, and could endure the impact of instances high temperature (about 1000, and less than 0.5 s) because of it's mechanical structure of cantilever bonded with SOI strain gauge. The test data of the sensor is obtained, and the result is satisfied. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：108 / 111

页数：4

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