Study on field-emission characteristics of electrodeposited Co-doped ZnO thin films

被引：27
作者：
Wang, Aihua [1 ,2 ,3 ]
Zhong, Zhiguo [1 ]
Lu, Cheng [1 ]
Lv, Linxia [1 ]
Wang, Xinchang [2 ,3 ]
Zhang, Binglin [2 ,3 ]
机构：
[1] Nanyang Normal Univ, Sch Phys & Elect Engn, Nanyang 473006, Peoples R China
[2] Zhengzhou Univ, Key Lab Mat Phys, Educ Minist China, Zhengzhou 450052, Peoples R China
[3] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 05期
关键词：
Co-doped ZnO films; Electrodeposition; Field-emission; Band gap; PL spectra; ZN1-XCOXO; SEMICONDUCTORS; FERROMAGNETISM;
D O I：
10.1016/j.physb.2010.08.022
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Co-doped ZnO films were fabricated using electrodeposition method on the ITO substrates. The structure of the Co-doped ZnO films was analyzed by X-ray diffraction and scanning electron microscope. The field-emission characteristics of the prepared Co-doped ZnO films were examined using diode structure in a vacuum chamber. The examined results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant, probably due to the band gap changing, which could attributed to the sp-d exchange interactions between the band electrons and the localized d electrons of the Co(2+) ions substituting Zn ions in the films. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1049 / 1052
页数：4
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