Study on field-emission characteristics of electrodeposited Co-doped ZnO thin films

被引：27

作者：

Wang, Aihua ^{[1
,2
,3
]}

Zhong, Zhiguo ^{[1
]}

Lu, Cheng ^{[1
]}

Lv, Linxia ^{[1
]}

Wang, Xinchang ^{[2
,3
]}

Zhang, Binglin ^{[2
,3
]}

机构：

[1] Nanyang Normal Univ, Sch Phys & Elect Engn, Nanyang 473006, Peoples R China

[2] Zhengzhou Univ, Key Lab Mat Phys, Educ Minist China, Zhengzhou 450052, Peoples R China

[3] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 05期

关键词：

Co-doped ZnO films; Electrodeposition; Field-emission; Band gap; PL spectra; ZN1-XCOXO; SEMICONDUCTORS; FERROMAGNETISM;

D O I：

10.1016/j.physb.2010.08.022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Co-doped ZnO films were fabricated using electrodeposition method on the ITO substrates. The structure of the Co-doped ZnO films was analyzed by X-ray diffraction and scanning electron microscope. The field-emission characteristics of the prepared Co-doped ZnO films were examined using diode structure in a vacuum chamber. The examined results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant, probably due to the band gap changing, which could attributed to the sp-d exchange interactions between the band electrons and the localized d electrons of the Co(2+) ions substituting Zn ions in the films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1049 / 1052

页数：4

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