Electronic transport behavior of off-stoichiometric La and Nb doped SrxTiyO3-δ epitaxial thin films and donor doped single-crystalline SrTiO3

被引：10
作者：
Baniecki, J. D. [1 ]
Ishii, M. [1 ]
Aso, H. [1 ]
Kobayashi, K. [1 ]
Kurihara, K. [1 ]
Yamanaka, K. [1 ]
Vailionis, A. [2 ]
Schafranek, R. [3 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[3] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 23期
关键词：
MOBILITY; GAS;
D O I：
10.1063/1.3664397
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Above room temperature electronic transport properties of SrxTiyO3-delta films with cation A/B = (La + Sr/Nb + Ti) ratios of 0.9 to 1.2 are compared to STO single crystals with combined Hall carrier densities of 3 x 10(16) cm(-3) <= n(H) <= 10(22) cm(-3). In contrast to Hall mobility which is single crystal-like (mu(H) approximate to 6 cm(2)/Vs) only near A/B - 1, the Seebeck coefficient (S) is single crystal-like over a range of nonstoichiometry. For n(H) < 10(20) cm(-3), S is well described by nondegenerate band-like transport with a constant effective mass m*/m(o) approximate to 5-8. For n(H) > 10(21) cm(-3), S is metallic-like with m*/m(o) similar to 8. No marked increase in m* with decreasing n(H) owing to a carrier filling dependence is observed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3664397]
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页数：3
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