Investigation on electrically-driven semiconductor-metal transition of polycrystalline VO2 thin films on two kinds of substrates

被引：10

作者：

Gu, Deen ^{[1
]}

Qin, Haoxin ^{[1
]}

Zhou, Xin ^{[1
]}

Xu, Shiyang ^{[1
]}

Jiang, Yadong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China

来源：

AIP ADVANCES | 2018年 / 8卷 / 01期

基金：

中国国家自然科学基金;

关键词：

INSULATOR-TRANSITION;

D O I：

10.1063/1.4998629

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical driving is one of frequently-used stimuli for the semiconductor-metal transition (SMT) of VO2. But the driving mechanism is still under debate. We investigated the DC electrically-driven SMT features of polycrystalline VO2 thin films deposited on two kinds of substrates (quartz and silicon) with obviously-different thermal conductivity and the influence of cooling by a thermo electric cooler (TEC) on the SMT of VO2. Interestingly, the SMT doesn't happen at a high voltage at very start, but at a relatively low one. Moreover, the SMT of VO2 thin films on silicon substrate is completely restrained by cooling through a TEC although the electric field strength across VO2 reaches 1.1 x 10(7) V/m. Our findings reveal that the Joule-heating effect plays an important role in the DC electrically-driven SMT of VO2. (c) 2018 Author(s).

引用

页数：7

共 27 条

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