Effect of Annealing on Undoped and Al- doped Zinc-oxide Thin Films Prepared By Sol-Gel Method

被引：3

作者：

Londhe, Priyanka U. ^{[1
]}

Chaure, N. B. ^{[1
]}

机构：

[1] Univ Pune, Dept Phys, Pune 411007, Maharashtra, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

关键词：

Sol-gel; Zinc oxide; Thin Films; Photoluminescence; Atomic Force Microscopy; ZNO; GROWTH;

D O I：

10.1063/1.3606059

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The nanocrystalline undoped and Al-doped zinc oxide (ZnO:Al) thin films were deposited on quartz substrate by sol-gel method. The effect of Al-doping along with the heat treatment on undoped & Al-doped ZnO thin films was extensively studied. The ZnO: Al thin films were preferentially c-axis oriented, the effect became more prominent after the heat treatment. Optical properties were studied by using UV-Vis-NIR spectrometer and Photoluminescence (PL) spectrophotometer. Atomic force micrograph revealed compact, void free & uniform deposition of both ZnO & ZnO:Al films.

引用

页码：717 / 718

页数：2

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