Specific contact resistance at extremely low temperatures

被引：7

作者：

Akiya, M

Aihara, M

机构：

[1] Musashi Institute of Technology, Setagaya-ku, Tokyo 158

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1997年 / 30卷 / 02期

关键词：

D O I：

10.1088/0022-3727/30/2/014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature-dependence of specific contact resistance for temperatures between room temperature and liquid-helium temperature (greater than or equal to 4.2 K) has been investigated for Al-to-boron- (1.2 x 10(20)cm(-3)) and Mg/Al-to-phosphorus(1 x 10(21) Cm-3) doped-silicon contacts. The specific contact resistance of these high-doping-density Si contacts was as low as 10(-7) Omega cm(2), even at low temperatures. The resistivity was found to increase slightly as temperature decreased, in contrast with previous predictions.

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页码：271 / 273

页数：3

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