Zero-line modes at stacking faulted domain walls in multilayer graphene

被引:22
作者
Lee, Changhee [1 ]
Kim, Gunn [2 ,3 ]
Jung, Jeil [4 ]
Min, Hongki [1 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 08826, South Korea
[2] Sejong Univ, Dept Phys, Seoul 143747, South Korea
[3] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[4] Univ Seoul, Dept Phys, Seoul 02504, South Korea
基金
新加坡国家研究基金会;
关键词
BILAYER; TRANSPORT;
D O I
10.1103/PhysRevB.94.125438
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rhombohedral multilayer graphene is a physical realization of the chiral two-dimensional electron gas that can host zero-line modes (ZLMs), also known as kink states, when the local gap opened by inversion symmetry breaking potential changes sign in real space. Here we study how the variations in the local stacking coordination of multilayer graphene affects the formation of the ZLMs. Our analysis indicates that the valley Hall effect develops whenever an interlayer potential difference is able to open up a band gap in stacking faulted multilayer graphene, and that ZLMs can appear at the domain walls separating two distinct regions with imperfect rhombohedral stacking configurations. Based on a tight-binding formulation with distant hopping terms between carbon atoms, we first show that topologically distinct domains characterized by the valley Chern number are separated by a metallic region connecting AA and AA' stacking line in the layer translation vector space. We find that gapless states appear at the interface between the two stacking faulted domains with different layer translation or with opposite perpendicular electric field if their valley Chern numbers are different.
引用
收藏
页数:9
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共 31 条
  • [1] Strain solitons and topological defects in bilayer graphene
    Alden, Jonathan S.
    Tsen, Adam W.
    Huang, Pinshane Y.
    Hovden, Robert
    Brown, Lola
    Park, Jiwoong
    Muller, David A.
    McEuen, Paul L.
    [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2013, 110 (28) : 11256 - 11260
  • [2] Role of geometry and topological defects in the one-dimensional zero-line modes of graphene
    Bi, Xintao
    Jung, Jeil
    Qiao, Zhenhua
    [J]. PHYSICAL REVIEW B, 2015, 92 (23)
  • [3] Dislocations in bilayer graphene
    Butz, Benjamin
    Dolle, Christian
    Niekiel, Florian
    Weber, Konstantin
    Waldmann, Daniel
    Weber, Heiko B.
    Meyer, Bernd
    Spiecker, Erdmann
    [J]. NATURE, 2014, 505 (7484) : 533 - +
  • [4] Localized states at zigzag edges of bilayer graphene
    Castro, Eduardo V.
    Peres, N. M. R.
    Lopes dos Santos, J. M. B.
    Castro Neto, A. H.
    Guinea, F.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (02)
  • [5] Topological confinement in trilayer graphene
    de Sena, S. H. R.
    Pereira, J. M., Jr.
    Peeters, F. M.
    Farias, G. A.
    [J]. PHYSICAL REVIEW B, 2014, 89 (03):
  • [6] Zak phase and the existence of edge states in graphene
    Delplace, P.
    Ullmo, D.
    Montambaux, G.
    [J]. PHYSICAL REVIEW B, 2011, 84 (19):
  • [7] Topological Kirchhoff law and bulk-edge correspondence for valley Chern and spin-valley Chern numbers
    Ezawa, Motohiko
    [J]. PHYSICAL REVIEW B, 2013, 88 (16)
  • [8] Topological valley transport at bilayer graphene domain walls
    Ju, Long
    Shi, Zhiwen
    Nair, Nityan
    Lv, Yinchuan
    Jin, Chenhao
    Velasco, Jairo, Jr.
    Ojeda-Aristizabal, Claudia
    Bechtel, Hans A.
    Martin, Michael C.
    Zettl, Alex
    Analytis, James
    Wang, Feng
    [J]. NATURE, 2015, 520 (7549) : 650 - U356
  • [9] Ab initio theory of moire superlattice bands in layered two-dimensional materials
    Jung, Jeil
    Raoux, Arnaud
    Qiao, Zhenhua
    MacDonald, A. H.
    [J]. PHYSICAL REVIEW B, 2014, 89 (20)
  • [10] Transport Properties of Graphene Nanoroads in Boron Nitride Sheets
    Jung, Jeil
    Qiao, Zhenhua
    Niu, Qian
    MacDonald, Allan H.
    [J]. NANO LETTERS, 2012, 12 (06) : 2936 - 2940