Monte Carlo modeling of the IBAD growth of the optical films

被引：5
作者：
Oleszkiewicz, W
Romiszowski, P
机构：
[1] Wroclaw Univ Technol, Inst Microsyst Technol, PL-50372 Wroclaw, Poland
[2] Univ Warsaw, Dept Chem, PL-02093 Warsaw, Poland
来源：
VACUUM | 2001年 / 63卷 / 04期
关键词：
IBAD; Monte Carlo simulation; thin film growth; optical layers;
D O I：
10.1016/S0042-207X(01)00249-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A Monte Carlo simulation model of the ion-assisted deposition process has been used in order to investigate the influence of some parameters on the final optical quality of the thin films. The simulations were performed on a simple cubic lattice with the ballistic deposition of particles. The mechanism of internal rearrangements of deposited adatoms has been introduced into the model. The results show that the angle of the ion beam as well as the kinetic energy of particles and ion-to-atom arrival ratio play an important role in the quality of the deposited films. The influence of these parameters on morphology of the films has also been discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：613 / 617
页数：5
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