Electron interaction with domain walls in Fe/Cr multilayers at low temperatures

被引：2

作者：

Aliev, FG

Schad, R

Volodin, A

van Haesendonck, C

Bruynseraede, Y

Villar, R

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain

[2] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

[3] Katholieke Univ Leuven, Lab Vaste Stoffys Magnetisme, B-3001 Louvain, Belgium

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 226卷 / PART I期

关键词：

domain wall; magnetoresistance-multilayers; magnetic imaging;

D O I：

10.1016/S0304-8853(00)00771-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For antiferromagnetically coupled [Fe/Cr](10) multilayers with Fe(Cr) thickness 30(13.5) Angstrom and 12(12) Angstrom, we found that at low fields the contribution of the domain walls to the resistivity, rho (DW), is small at room temperature and strongly enhanced at low temperatures. Magnetic force microscopy images clearly reveal the presence of domain walls. In a wide interval above 1.9 K rho (DW) varies as rho (DW)(T) = rho (DW)(0) - AT(alpha) with the exponent alpha similar or equal to 0.7-1. indicating the possible presence of quantum interference effects in the quasiballistic electron transport through domain walls. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：745 / 746

页数：2

共 4 条

[1] LAYERED MAGNETIC-STRUCTURES - INTERLAYER EXCHANGE COUPLING AND GIANT MAGNETORESISTANCE [J].