On the Mechanism of Hydrophilicity of Graphene

被引:164
作者
Hong, Guo [1 ]
Han, Yang [2 ]
Schutzius, Thomas M. [1 ]
Wang, Yuming [3 ]
Pan, Ying [1 ]
Hu, Ming [2 ,4 ]
Jie, Jiansheng [3 ]
Sharma, Chander S. [1 ]
Muller, Ulrich [5 ]
Poulikakos, Dimos [1 ]
机构
[1] Swiss Fed Inst Technol, Dept Mech & Proc Engn, Lab Thermodynam Emerging Technol, Sonneggstr 3, CH-8092 Zurich, Switzerland
[2] Rhein Westfal TH Aachen, Inst Mineral Engn, Fac Georesources & Mat Engn, Div Mat Sci & Engn, D-52064 Aachen, Germany
[3] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[4] Rhein Westfal TH Aachen, Aachen Inst Adv Study Computat Engn Sci AICES, D-52062 Aachen, Germany
[5] Empa, Swiss Fed Labs Mat Sci & Technol, Lab Nanoscale Mat Sci, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
基金
欧洲研究理事会; 瑞士国家科学基金会;
关键词
graphene; hydrophilicity; Fermi-level engineering; condensation; ENHANCED CONDENSATION; SURFACE; TRANSPARENCY; CONTAMINANTS; WETTABILITY; GROWTH; FILMS;
D O I
10.1021/acs.nanolett.6b01594
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
It is generally accepted that the hydrophilic property of graphene can be affected by the underlying substrate. However, the role of intrinsic vs substrate contributions and the related mechanisms are vividly debated. Here, we show that the intrinsic hydrophilicity of graphene can be intimately connected to the position of its Fermi level, which affects the interaction between graphene and water molecules. The underlying substrate, or dopants, can tune hydrophilicity by modulating the Fermi level of graphene. By shifting the Fermi level of graphene away from its Dirac point, via either chemical or electrical voltage doping, we show enhanced hydrophilicity with experiments and first principle simulations. Increased vapor condensation on graphene, induced by a simple shifting of its Fermi level, exemplifies applications in the area of interfacial transport phenomena.
引用
收藏
页码:4447 / 4453
页数:7
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