Comprehensive Device Modeling and Performance Analysis of Quantum Dot-Perovskite Solar Cells

被引：7

作者：

Mukherjee, Iraban ^{[1
]}

Somay, Srest ^{[2
]}

Pandey, Saurabh Kumar ^{[3
]}

机构：

[1] Indian Inst Engn Sci & Technol, Dept Elect & Telecommun Engn, Sibpur, India

[2] Natl Inst Technol, Dept Met & Mat Engn, Warangal, Andhra Pradesh, India

[3] Indian Inst Technol, Dept Elect Engn, Sensors & Optoelect Res Grp SORG, Patna, Bihar, India

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2022年 / 51卷 / 04期

基金：

英国科研创新办公室;

关键词：

Quantum dot; perovskite; electron transport layer (ETL); simulation; EFFICIENT;

D O I：

10.1007/s11664-021-09409-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum dot-perovskite solar cells have garnered significant attention within the photovoltaic community over the past decade. In this report, we study the performance of a PbS quantum dot solid layer treated with a CH3NH3PbI3 perovskite absorber. A self-consistent device model with an unprecedented architecture (ITO/ETL(TiO2)/CH3NH3PbI3/PbS TBAI) was developed, and a rigorous numerical analysis was performed to optimize the performance of the device. The effect of several device parameters including absorber layer thickness, quantum dot layer thickness, doping concentration, defect density, and interface defect density on the performance of the developed device model was studied. Finally, the effect of gradient doping on the performance of the device was studied. With the optimized parameters, we obtained a power conversion efficiency (PCE) of 26.05% which is considerably better than that reported in previous studies.

引用

页码：1524 / 1532

页数：9

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