High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots

被引：47

作者：

Germann, T. D. ^{[1
]}

Strittmatter, A. ^{[1
]}

Pohl, J. ^{[1
]}

Pohl, U. W. ^{[1
]}

Bimberg, D. ^{[1
]}

Rautiainen, J. ^{[2
]}

Guina, M. ^{[2
]}

Okhotnikov, O. G. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany

[2] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.2898165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An optically pumped semiconductor disk laser using submonolayer quantum dots (SML QDs) as gain medium is demonstrated. High-power operation is achieved with stacked InAs/GaAs SML QDs grown by metal-organic vapor-phase epitaxy. Each SML-QD layer is formed from tenfold alternate depositions of nominally 0.5 ML InAs and 2.3 ML GaAs. Resonant periodic gain from a 13-fold nonuniform stack design of SML QDs allows to produce 1.4 W cw at 1034 nm. The disk laser demonstrates the promising potential of SML-QD structures combining properties of QD and quantum-well gain media for high-power applications. (C) 2008 American Institute of Physics.

引用

页数：3

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