Charge localization and trapping at surfaces in lead-iodide perovskites: the role of polarons and defects

被引:58
作者
Ambrosio, Francesco [1 ,2 ]
Meggiolaro, Daniele [1 ]
Mosconi, Edoardo [1 ]
De Angelis, Filippo [1 ,3 ]
机构
[1] Ist CNR Sci Tecnol Chim Giulio Natta CNR SCITEC, Computat Lab Hybrid Organ Photovolta CLHYO, Via Elce Sotto 8, I-06123 Perugia, Italy
[2] Ist Italiano Tecnol, CompuNet, Via Morego 30, I-16163 Genoa, Italy
[3] Univ Perugia, Dept Chem Biol & Biotechnol, Via Elce Sotto 8, I-06123 Perugia, Italy
关键词
DENSITY-FUNCTIONAL CALCULATIONS; ELECTRON-HOLE RECOMBINATION; HALIDE PEROVSKITES; HYBRID PEROVSKITES; HIGH-PERFORMANCE; CH3NH3PBI3; PHOTOLUMINESCENCE; TERMINATION; COMPETITION; ABSORPTION;
D O I
10.1039/d0ta00798f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Surfaces and grain boundaries play a fundamental role in charge transport, localization and trapping in polycrystalline thin films of metal halide perovskites. Comprehension of the phenomena occurring at the surface is thus crucial to increase solar cell efficiency and, most importantly, temporal stability. We investigate charge localization and trapping at the surface of the prototypical MAPbI(3) perovskite through advanced electronic-structure calculations, considering different surface terminations. Both MAI- and PbI2-terminated surfaces exhibit a clear spatial separation of hole and electron polarons, while a MAI-vacant surface induces charge localization at under-coordinated lead atoms. Notably, the PbI2-terminated surface is sensitive to surface defects, which may either act as recombination centres or inhibit charge transfer at the surface, while the MAI-terminated surface is comparably more defect tolerant. We thus suggest that perovskite growth under MAI-rich conditions should be beneficial to limit surface recombination, while the synthesis of MAPbI(3) in a PbI2-rich environment should be accompanied by surface passivation strategies to counteract the negative impact of surface defects.
引用
收藏
页码:6882 / 6892
页数:11
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