In-plane magnetic anisotropy in Fe/MgO/GaAs(001) system

被引：15
|
作者：
Chen, G.
Li, J. X.
Zhu, J.
Liang, J. H.
Wu, Y. Z. [1 ]
机构：
[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 07期
关键词：
FILMS; GAAS(001); GROWTH; MGO;
D O I：
10.1063/1.3537925
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The in-plane magnetic anisotropy in the Fe/MgO/GaAs(001) system has been carefully studied as a function of MgO thickness. The epitaxial relation is Fe(001)[110]//MgO(001)[100]//GaAs(001) [100] for d(MgO)>1 monolayer (ML). The interfacial uniaxial anisotropy was greatly reduced by the MgO interlayer, and the easy axis of the fourfold anisotropy was found to rotate from the GaAs < 100 > direction to the GaAs < 110 > direction. Such anisotropy transition happens within the 1.2 ML MgO thickness range. (C) 2011 American Institute of Physics. [doi:10.1063/1.3537925]
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页数：3
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