Performance overview and outlook of EUV lithography systems

被引：44

作者：

Pirati, Alberto ^{[1
]}

Peeters, Rudy ^{[1
]}

Smith, Daniel ^{[1
]}

Lok, Sjoerd ^{[1
]}

Minnaert, Arthur ^{[1
]}

van Noordenburg, Martijn ^{[1
]}

Mallmann, Joerg ^{[1
]}

Harned, Noreen ^{[1
]}

Stoeldraijer, Judon ^{[1
]}

Wagner, Christian ^{[1
]}

Zoldesi, Carmen ^{[1
]}

van Setten, Eelco ^{[1
]}

Finders, Jo ^{[1
]}

de Peuter, Koen ^{[1
]}

de Ruijter, Chris ^{[1
]}

Popadic, Milos ^{[1
]}

Huang, Roger ^{[1
]}

Lin, Martin ^{[1
]}

Chuang, Frank ^{[1
]}

van Es, Roderik ^{[1
]}

Beckers, Marcel ^{[1
]}

Brandt, David ^{[2
]}

Farrar, Nigel ^{[2
]}

Schafgans, Alex ^{[2
]}

Brown, Daniel ^{[2
]}

Boom, Herman ^{[1
]}

Meiling, Hans ^{[1
]}

Kool, Ron ^{[1
]}

机构：

[1] ASML Netherlands BV, NL-5504 DR Veldhoven, Netherlands

[2] Cymer, San Diego, CA USA

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VI | 2015年 / 9422卷

关键词：

EUV lithography; system performance; EUV sources; overlay; imaging; devices; high volume manufacturing;

D O I：

10.1117/12.2085912

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Multiple NXE: 3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE: 3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4(th) generation EUV system, the NXE: 3350, is being qualified in the ASML factory.

引用

页数：18

共 8 条

[1]

Anthony Yen, 2015, SPIE MICROLITHOGRAPH

[2]

Lim Changmoon, 2015, SPIE MICROLITHOGRAPH

[3]

Peeters R., 2014, EUVL S

[4]

Peeters Rudy, 2014, SPIE MICROLITHOGRPHY

[5]

Scaccabarozzi Luigi, 2013, SPIE MICROLITHOGRAPH

[6]

Schafgans Alex, 2015, SPIE MICROLITHOGRAPH

[7]

Zoldesi Carmen, 2015, SPIE MICROLITHOGRAPH

[8]

Zoldesi Carmen, 2014, SPIE MICROLITHOGRAPH

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