Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs

被引：15

作者：

Nagatomi, Yuta ^{[1
]}

Tanaka, Shintaro ^{[1
]}

Nagaoka, Yuichi ^{[1
]}

Yamamoto, Keisuke ^{[2
]}

Wang, Dong ^{[1
]}

Nakashima, Hiroshi ^{[2
]}

机构：

[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580, Japan

[2] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 07期

关键词：

GERMANIUM; GATE; S/D;

D O I：

10.7567/JJAP.54.070306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of PtGe/Ge contacts with low hole barrier height (Phi(BP)) and its electrical passivation were investigated. A PtGe/n-Ge contact passivated by an ultrathin SiO2/GeO2 bilayer showed a high electron barrier height of 0.64 eV, indicating Phi(BP) similar to 0 eV and an on/off ratio of similar to 10(6). A p-channel MOSFET (p-MOSFET) with an equivalent oxide thickness of 3.4nm was fabricated using PtGe contacts as the source/drain (S/D), which showed well-behaved transistor operation. By investigating device performance, we showed that the on/off ratio of drain current and the parasitic resistance of PtGe-S/D p-MOSFETs were much superior to those of HfGe-S/D p-MOSFETs. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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