High-efficiency 808-nm InGaAlAs-AlGaAs double-quantum-well semiconductor lasers with asymmetric waveguide structures

被引：22

作者：

Li, Lin ^{[1
]}

Liu, Guojun ^{[1
]}

Li, Zhanguo ^{[1
]}

Li, Mei ^{[1
]}

Li, Hui ^{[1
]}

Wang, Xiaohua ^{[1
]}

Wan, Chunming ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 5-8期

关键词：

asymmetric waveguide; molecular beam epitaxy; quantum efficiency; semiconductor lasers;

D O I：

10.1109/LPT.2008.918857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm(2)and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm(-1) and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mu m stripe widths 808-nm-emitting laser diodes with 1000-mu m cavity length.

引用

页码：566 / 568

页数：3

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