Doped chalcogenide glass thin films deposited by pulsed laser ablation

被引：0
|
作者：
Caricato, AP [1 ]
Fernandez, M [1 ]
Leggieri, G [1 ]
Luches, A [1 ]
Martino, M [1 ]
Prudenzano, F [1 ]
机构：
[1] INFM, I-73100 Lecce, Italy
来源：
OPTICS FOR THE QUALITY OF LIFE, PTS 1 AND 2 | 2003年 / 4829卷
关键词：
D O I：
10.1117/12.525836
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pr3+-doped chalcogenide g lass (GeS2-Ga2S3-CsI) targets were ablated in vacuum (1 x 10(-5) Pa) by XeCl laser pulses. The deposited films were plane, smooth, well adhesive to the substrate and with a composition close to the target one. The film thickness ranged from similar to500 nm to similar to2000 nm. The transmittance and reflectance of the deposited films were measured in the range 400-2500 nm. The-transmittance resulted higher than 80% for wavelengths longer than 900 nm. The optical indices n and k were calculated from the experimental curve as a function of wavelength by means of a commercial computer code. The feasibility of waveguide amplifiers and laser made of Pr3+-doped chalcogenide glass was investigated by an implemented computer code.
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收藏
页码：123 / 124
页数：2
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