Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots

被引：33

作者：

Ghosh, S ^{[1
]}

Lenihan, AS

Dutt, MVG

Qasaimeh, Q

Steel, DG

Bhattacharya, P

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Harrison M Randall Lab Phys, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.1374623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electro-optic and nonlinear optical properties of self-organized InxGa1-xAs/GaAs quantum dots were studied experimentally. The quantum dot heterostructures were grown by molecular beam epitaxy. The measured linear and quadratic electro-optic coefficients for In0.4Ga0.6As quantum dots are 2.58 X 10(-11) m/V and 6.25 X 10(-17) m(2)/V-2, respectively. For InAs quantum dots, the measured linear and quadratic electro-optic coefficients are 2.43 x 10(-10) m/V and 3.37 x 10(-17) m(2)/V-2, respectively. Pump-probe differential transmission spectroscopy measurements were made on the dot samples at cryogenic temperatures with linear and circularly polarized pump and probe beams. The ground and excited state recombination times are 620 and 290 ps, respectively. (C) 2001 American Vacuum Society.

引用

页码：1455 / 1458

页数：4

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