Organic thin-film transistors with a photo-patternable semiconducting polymer blend

被引：27
作者：
Qiu, Longzhen [1 ]
Xu, Qiong [1 ]
Lee, Wi Hyoung [2 ]
Wang, Xiaohong [1 ]
Kang, Boseok [2 ]
Lv, Guoqiang [1 ]
Cho, Kilwon [2 ]
机构：
[1] Hefei Univ Technol, Key Lab Special Display Technol, Natl Engn Lab Special Display Technol, Minist Educ,Natl Key Lab Adv Display Technol,Acad, Hefei 230009, Peoples R China
[2] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 39期
基金：
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词：
FIELD-EFFECT TRANSISTORS; EFFECT MOBILITY; HIGH-RESOLUTION; POLY(3-HEXYLTHIOPHENE); POLYTHIOPHENE; CIRCUITS; DEPENDENCE; MORPHOLOGY; PENTACENE; TRANSPORT;
D O I：
10.1039/c1jm12366a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A blend of organic semiconductors and photocrosslinkable insulating polymers was photolithographically patterned to yield organic thin-film transistors (OTFTs). The semiconducting polymer of the blend, poly(3-hexylthiophene), was present as a nanofibrillar network and yielded excellent electronic properties. The insulating polymer matrix, poly(vinyl cinnamate), provided the photosensitivity required for photopatterning. The photopatterned TFT devices showed large on/off ratios (>10(5)) and high mobilities (0.015 cm(2) V(-1) s(-1)) comparable to those of devices patterned by conventional means using the same semiconducting materials. This simple method permitted the high-resolution cost-effective patterning of organic semiconductors and may play an important role in the mass-production of organic electronic devices.
引用
收藏
页码：15637 / 15642
页数：6
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