High performance narrow stripe quantum-dot lasers with etched waveguide

被引：54

作者：

Ouyang, D ^{[1
]}

Ledentsov, NN

Bimberg, D

Kovsh, AR

Zhukov, AE

Mikhrin, SS

Ustinov, VM

机构：

[1] Tech Univ Berlin, D-10623 Berlin, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 12期

关键词：

D O I：

10.1088/0268-1242/18/12/101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.3 mum range narrow stripe (8 mum) quantum-dot (QD) lasers processed in deep-mesa geometry, etched through the waveguide, demonstrate high external differential efficiency (50%) and a low threshold current density (< 130 A cm(-2)) superior to the shallow mesa devices. This opens a new way for cost-efficient fabrication of distributed feedback and photonic crystal QD devices.

引用

页码：L53 / L54

页数：2

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