Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

被引：12

作者：

Gablech, Imrich ^{[1
,2
]}

Klempa, Jaroslav ^{[1
,2
]}

Pekarek, Jan ^{[1
,2
]}

Vyroubal, Petr ^{[3
]}

Hrabina, Jan ^{[4
]}

Hola, Miroslava ^{[4
]}

Kunz, Jan ^{[5
]}

Brodsky, Jan ^{[1
]}

Neuzil, Pavel ^{[6
]}

机构：

[1] Brno Univ Technol, Cent European Inst Technol, CZ-61600 Brno, Czech Republic

[2] Brno Univ Technol, Fac Elect Engn & Commun, Dept Microelect, CZ-61600 Brno, Czech Republic

[3] Brno Univ Technol, Fac Elect Engn & Commun, Dept Elect & Elect Technol, CZ-61600 Brno, Czech Republic

[4] Czech Acad Sci, Inst Sci Instruments, CZ-61264 Brno, Czech Republic

[5] Brno Univ Technol, Fac Elect Engn & Commun, Dept Control & Instrumentat, CZ-61600 Brno, Czech Republic

[6] Northwestern Polytech Univ, Sch Mech Engn, Dept Microsyst Engn, Xian 710072, Peoples R China

来源：

MICROMACHINES | 2020年 / 11卷 / 02期

关键词：

AlN; micro-electro-mechanical systems (MEMS) cantilever; complementary metal oxide semiconductor (CMOS) compatible; energy harvesting; high performance; THIN-FILM; DEPOSITION;

D O I：

10.3390/mi11020143

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d(33) of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of approximate to 330 degrees C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

引用

页数：10