Thickness dependence of mobility in pentacene thin-film transistors

被引：304

作者：

Ruiz, R ^{[1
]}

Papadimitratos, A ^{[1
]}

Mayer, AC ^{[1
]}

Malliaras, GG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 14期

关键词：

D O I：

10.1002/adma.200402077

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The field-effect mobility of pentacene transistors saturates when six monolayers of pentacene are deposited on the gate dielectric. This saturation is not caused by the formation of islands, as the early stages of growth have been found to take place in a layer-by-layer fashion, and layer completion continues well past six monolayers (see Figure).

引用

页码：1795 / +

页数：5

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