Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm

被引：1
作者：
Camargo, Fabiola A. [1 ]
Janicot, Sylvie [1 ]
Sagnes, Isabelle [2 ]
Garnache, Arnaud [3 ]
Georges, Patrick [1 ]
Lucas-Leclin, Gaelle [1 ]
机构：
[1] Univ Paris Sud, CNRS, Inst Opt, Lab Charles Fabry, 2 Ave Augustin Fresnel, F-91127 Palaiseau, France
[2] CNRS, UPR20, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[3] Univ Montpellier 2, Inst Elect Sud, CNRS, UMR5507, F-34095 Montpellier 5, France
来源：
VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) II | 2012年 / 8242卷
关键词：
Semiconductor lasers; VECSEL; Thermal lens; Single-frequency;
D O I：
10.1117/12.908738
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present in this work the study of a short vertical external cavity semiconductor laser in single longitudinal operation at 852 nm without intracavity elements. Two different configurations were studied, a plane-plane configuration, stabilized by the thermal lens and a plane-concave configuration. The influence of the output coupler transmission and the thermal lens has been studied. In the plane concave configuration we have demonstrated more than 100mW in stable single frequency operation using a very compact cavity emitting around 852 nm.
引用
收藏
页数：9
相关论文
共 12 条
[1]   Thermal lensing in diode-pumped ytterbium lasers -: Part I:: Theoretical analysis and wavefront measurements [J].
Chénais, S ;
Balembois, F ;
Druon, F ;
Lucas-Leclin, G ;
Georges, P .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (09) :1217-1234
[2]   Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D2 line [J].
Cocquelin, B. ;
Holleville, D. ;
Lucas-Leclin, G. ;
Sagnes, I. ;
Garnache, A. ;
Myara, M. ;
Georges, P. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 95 (02) :315-321
[3]   Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantum limit [J].
Garnache, A. ;
Ouvrard, A. ;
Romanini, D. .
OPTICS EXPRESS, 2007, 15 (15) :9403-9417
[4]   Narrow bandwidth interference filter-stabilized diode laser systems for the manipulation of neutral atoms [J].
Gilowski, M. ;
Schubert, Ch. ;
Zaiser, M. ;
Herr, W. ;
Wuebbena, T. ;
Wendrich, T. ;
Mueller, T. ;
Rasel, E. M. ;
Ertmer, W. .
OPTICS COMMUNICATIONS, 2007, 280 (02) :443-447
[5]   0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser [J].
Hastie, JE ;
Hopkins, JM ;
Calvez, S ;
Jeon, CW ;
Burns, D ;
Abram, R ;
Riis, E ;
Ferguson, AI ;
Dawson, MD .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (07) :894-896
[6]   Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling [J].
Jacquemet, M. ;
Domenech, M. ;
Lucas-Leclin, G. ;
Georges, P. ;
Dion, J. ;
Strassner, M. ;
Sagnes, I. ;
Garnache, A. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2007, 86 (03) :503-510
[7]   Thermal lensing, thermal management and transverse mode control in microchip VECSELs [J].
Kemp, AJ ;
Maclean, AJ ;
Hastie, JE ;
Smith, SA ;
Hopkins, JM ;
Calvez, S ;
Valentine, GJ ;
Dawson, MD ;
Burns, D .
APPLIED PHYSICS B-LASERS AND OPTICS, 2006, 83 (02) :189-194
[8]   High-power 894 nm monolithic distributed-feedback laser [J].
Klehr, A. ;
Wenzel, H. ;
Brox, O. ;
Bugge, F. ;
Erbert, G. ;
Nguyen, T-P. ;
Traenkle, G. .
OPTICS EXPRESS, 2007, 15 (18) :11364-11369
[9]   Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].
Kuznetsov, M ;
Hakimi, F ;
Sprague, R ;
Mooradian, A .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :561-573
[10]   Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser [J].
Laurain, A. ;
Myara, M. ;
Beaudoin, G. ;
Sagnes, I. ;
Garnache, A. .
OPTICS EXPRESS, 2010, 18 (14) :14627-14636
12