Quantum conductance oscillations in metal/molecule/metal switches at room temperature

被引：15

作者：

Miao, Feng ^{[1
]}

Ohlberg, Douglas ^{[2
]}

Stewart, Duncan R. ^{[2
]}

Williams, R. Stanley ^{[2
]}

Lau, Chun Ning ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[2] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.101.016802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We apply pressure-modulated conductance microscopy to metal/molecule/metal switches. Apart from pressure-induced conductance peaks that indicate nanoscale conducting pathways, we also observe dips and oscillations for devices with conductance between 1 and 2 conductance quantum. The conductance oscillations arise from interfering electron waves along one or two quantum conductance channels between two partially transmitting electrode surfaces at room temperature, underscoring these devices' potential as coherent, atomic-scale switches.

引用

页数：4

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