Tension-Induced Raman Enhancement of Graphene Membranes in the Stretched State

被引：17

作者：

Hu, Kai-Ming ^{[1
]}

Xue, Zhong-Ying ^{[2
]}

Liu, Yun-Qi ^{[2
]}

Long, Hu ^{[3
]}

Peng, Bo ^{[1
]}

Yan, Han ^{[1
]}

Di, Zeng-Feng ^{[2
]}

Wang, Xi ^{[2
]}

Lin, Liwei ^{[4
]}

Zhang, Wen-Ming ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Mech Engn, State Key Lab Mech Syst & Vibrat, Shanghai 200240, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, 5101-B Etcheverry, Berkeley, CA 94720 USA

来源：

SMALL | 2019年 / 15卷 / 02期

基金：

中国国家自然科学基金; 中国博士后科学基金; 美国国家科学基金会;

关键词：

built-in stresses; G band depression effect; intensity ratios; Raman enhancement phenomenon; stretched graphene; SUSPENDED GRAPHENE; SPECTROSCOPY; RESONATORS; ELECTRODES; SCATTERING; STRAIN;

D O I：

10.1002/smll.201804337

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The intensity ratio of the 2D band to the G band, I-2D/I-G, is a good criterion in selecting high quality monolayer graphene samples; however, the evaluation of the ultimate value of I-2D/I-G for intrinsic monolayer graphene is a challenging yet interesting issue. Here, an interesting tension-induced Raman enhancement phenomenon is reported in supported graphene membranes, which show a transition from the corrugated state to the stretched state in the vicinity of wells. The I-2D/I-G of substrate-supported graphene membranes near wells are significantly enhanced up to 16.74, which is the highest experimental value to the best of knowledge, increasing by more than 600% when the testing points approach the well edges.The macroscopic origin of this phenomenon is that corrugated graphene membranes are stretched by built-in tensions. A lattice dynamic model is proposed to successfully reveal the microscopic mechanism of this phenomenon. The theoretical results agree well with the experimental data, demonstrating that tensile stresses can depress the amplitude of in-plane vibration of sp(2)-bonded carbon atoms and result in the decrease in the G band intensity. This work can be helpful in furthering the development of the method of suppressing small ripples in graphene and acquiring ultraflat 2D materials.

引用

页数：11

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