Rapid synthesis of few-layer graphene over Cu foil

被引:76
|
作者
Kumar, A. [1 ]
Voevoclin, A. A. [1 ,2 ]
Zemlyanov, D. [1 ]
Zakharov, D. N. [1 ]
Fisher, T. S. [1 ,2 ]
机构
[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[2] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA
关键词
CHEMICAL-VAPOR-DEPOSITION; ENERGY CALIBRATION; RAMAN-SCATTERING; GROWTH; GRAPHITE; COPPER; SPECTROSCOPY; FILMS;
D O I
10.1016/j.carbon.2011.11.033
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a unique process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). We show that the plasma/metal interaction can be advantageous for a rapid synthesis of such thin films. The process can produce films of controllable quality from amorphous to highly crystalline by adjusting plasma conditions during growth processes of similar to 100 s duration and with no supplemental substrate heating. Films have been characterized using Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results help to identify the stages involved in the MPCVD deposition of thin carbon films on Cu foil, and the findings open new pathways for a rapid growth of few-layer graphene films. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1546 / 1553
页数:8
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