Rapid synthesis of few-layer graphene over Cu foil

被引：76

作者：

Kumar, A. ^{[1
]}

Voevoclin, A. A. ^{[1
,2
]}

Zemlyanov, D. ^{[1
]}

Zakharov, D. N. ^{[1
]}

Fisher, T. S. ^{[1
,2
]}

机构：

[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[2] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

CARBON | 2012年 / 50卷 / 04期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ENERGY CALIBRATION; RAMAN-SCATTERING; GROWTH; GRAPHITE; COPPER; SPECTROSCOPY; FILMS;

D O I：

10.1016/j.carbon.2011.11.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a unique process for rapid synthesis of few-layer graphene films on Cu foil by microwave plasma chemical vapor deposition (MPCVD). We show that the plasma/metal interaction can be advantageous for a rapid synthesis of such thin films. The process can produce films of controllable quality from amorphous to highly crystalline by adjusting plasma conditions during growth processes of similar to 100 s duration and with no supplemental substrate heating. Films have been characterized using Raman spectroscopy, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results help to identify the stages involved in the MPCVD deposition of thin carbon films on Cu foil, and the findings open new pathways for a rapid growth of few-layer graphene films. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1546 / 1553

页数：8

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