Effect of H+ and O+ implantation on electrical properties of SrBi2Ta2O9 ferroelectric thin films

The effect on the crystalline structure and ferroelectric properties of ion implantation in SrBi2Ta2O9(SBT) ferroelectric thin films has been investigated. 25 keV H+, 140 keV O+ with doses from 1x10(14)/cm(2) to 3x10(15)/cm(2) were implanted into the Sol-Gel prepared SET ferroelectric thin films. The X-ray diffraction patterns of SET films show that no difference appears in the crystalline structure of as-H+-implanted SET films compared with as-grown films, H+ and Of co-implanted SET films show an obvious degradation of crystalline structure. Ferroelectric properties measurements indicate that both remnant polarization and coercive electric field of H+ implanted SET films decrease with increasing the implantation dose. The disappearance of ferroelectricity was found in the H+, O+ coimplanted SET films at room temperature. The great recovery of hydrogen-induced degradation in SET films was obtained with O+ implantation using a heat-target-implantation technique. (C) 1999 Elsevier Science B.V. All rights reserved.