Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

被引：7

作者：

Mendoza, Frank ^{[1
,2
]}

Makarov, Vladimir ^{[1
,2
]}

Hidalgo, Arturo ^{[1
,2
]}

Weiner, Brad ^{[1
,3
]}

Morell, Gerardo ^{[1
,2
]}

机构：

[1] Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00936 USA

[2] Univ Puerto Rico, Dept Phys, San Juan, PR 00936 USA

[3] Univ Puerto Rico, Dept Chem, San Juan, PR 00936 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 11期

关键词：

UV PHOTODETECTORS; RADIATION; CARBON; PHOTOCONDUCTORS; DETECTORS; SENSORS; FILMS;

D O I：

10.1063/1.3590153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature photosensitivity of sulfur-doped micro-, submicro-, and nano-crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy, and x-ray diffraction. The ultraviolet (UV) sensitivity and response time were studied for the three types of diamond materials using a steady-state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region (as high as 10(9) s(-1) mV(-1) range), a linear response in a broad spectral range below 320 nm, photocurrents around similar to 10(-5) A, and a short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials' photosensitivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3590153]

引用

页数：6

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