Engineering and metrology of epitaxial graphene

被引：19

作者：

Tzalenchuk, Alexander ^{[1
]}

Lara-Avila, Samuel ^{[2
]}

Cedergren, Karin ^{[2
]}

Syvajarvi, Mikael ^{[3
]}

Yakimova, Rositza ^{[3
]}

Kazakova, Olga ^{[1
]}

Janssen, T. J. B. M. ^{[1
]}

Moth-Poulsen, Kasper ^{[4
]}

Bjornholm, Thomas ^{[5
,6
]}

Kopylov, Sergey ^{[7
]}

Fal'ko, Vladimir ^{[7
]}

Kubatkin, Sergey ^{[2
]}

机构：

[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[2] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[4] Univ Calif Berkeley, Coll Chem, Berkeley, CA 94720 USA

[5] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[6] Univ Copenhagen, Dept Chem, DK-2100 Copenhagen, Denmark

[7] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

Graphene; Quantum Hall effect; Photochemical gate; Metrology; BILAYER GRAPHENE; BERRYS PHASE; GAS;

D O I：

10.1016/j.ssc.2011.05.020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.

引用

页码：1094 / 1099

页数：6

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