Engineering and metrology of epitaxial graphene

被引：19

作者：

Tzalenchuk, Alexander ^{[1
]}

Lara-Avila, Samuel ^{[2
]}

Cedergren, Karin ^{[2
]}

Syvajarvi, Mikael ^{[3
]}

Yakimova, Rositza ^{[3
]}

Kazakova, Olga ^{[1
]}

Janssen, T. J. B. M. ^{[1
]}

Moth-Poulsen, Kasper ^{[4
]}

Bjornholm, Thomas ^{[5
,6
]}

Kopylov, Sergey ^{[7
]}

Fal'ko, Vladimir ^{[7
]}

Kubatkin, Sergey ^{[2
]}

机构：

[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[2] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[4] Univ Calif Berkeley, Coll Chem, Berkeley, CA 94720 USA

[5] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[6] Univ Copenhagen, Dept Chem, DK-2100 Copenhagen, Denmark

[7] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

Graphene; Quantum Hall effect; Photochemical gate; Metrology; BILAYER GRAPHENE; BERRYS PHASE; GAS;

D O I：

10.1016/j.ssc.2011.05.020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.

引用

页码：1094 / 1099

页数：6

共 50 条

[1] Epitaxial graphene for quantum resistance metrology
Kruskopf, Mattias
Elmquist, Randolph E.
METROLOGIA, 2018, 55 (04) : R27 - R36
[2] Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology
Theodoor Jan B. M. Janssen
Alexander Tzalenchuk
Samuel Lara-Avila
Sergey Kubatkin
Vladimir Fal’ko
MAPAN, 2013, 28 : 239 - 250
[3] Practical and Fundamental Impact of Epitaxial Graphene on Quantum Metrology
Janssen, T. J. B. M.
Tzalenchuk, A.
Lara-Avila, S.
Kubatkin, S.
Fal'ko, V.
MAPAN-JOURNAL OF METROLOGY SOCIETY OF INDIA, 2013, 28 (04): : 239 - 250
[4] Low contact resistance in epitaxial graphene devices for quantum metrology
Yager, Tom
Lartsev, Arseniy
Cedergren, Karin
Yakimova, Rositsa
Panchal, Vishal
Kazakova, Olga
Tzalenchuk, Alexander
Kim, Kyung Ho
Park, Yung Woo
Lara-Avila, Samuel
Kubatkin, Sergey
AIP ADVANCES, 2015, 5 (08):
[5] Glass encapsulation of molecular-doped epitaxial graphene for quantum resistance metrology
Park, Jaesung
Lim, Kyung-Geun
Chae, Dong-Hun
MEASUREMENT SCIENCE AND TECHNOLOGY, 2022, 33 (11)
[6] Engineering the spin conversion in graphene monolayer epitaxial structures
Anadon, Alberto
Gudin, Adrian
Guerrero, Ruben
Arnay, Iciar
Guedeja-Marron, Alejandra
Jimenez-Cavero, Pilar
Diez Toledano, Jose Manuel
Ajejas, Fernando
Varela, Maria
Petit-Watelot, Sebastien
Lucas, Irene
Morellon, Luis
Antonio Algarabel, Pedro
Ricardo Ibarra, Manuel
Miranda, Rodolfo
Camarero, Julio
Carlos Rojas-Sanchez, Juan
Perna, Paolo
APL MATERIALS, 2021, 9 (06)
[7] ENGINEERING METROLOGY
不详
NATURE, 1949, 163 (4145) : 560 - 560
[8] Epitaxial layer characterization and metrology
Airaksinen, VM
SILICON EPITAXY, 2001, 72 : 225 - 276
[9] Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)
Jayasekera, Thushari
Kong, B. D.
Kim, K. W.
Nardelli, M. Buongiorno
PHYSICAL REVIEW LETTERS, 2010, 104 (14)
[10] Bismuth mediated defect engineering of epitaxial graphene on SiC(0001)
Hu, Tingwei
Ma, Dayan
Fang, Qinglong
Zhang, Peng
Liu, Xiangtai
Wei, Ran
Pan, Yi
Xu, Kewei
Ma, Fei
CARBON, 2019, 146 : 313 - 319

← 1 2 3 4 5 →